论文标题
高光石墨烯 - 格雷烯波导PD具有高摄影和黑暗电流比和较大线性动态范围
High-speed graphene-silicon-graphene waveguide PDs with high photo-to-dark-current ratio and large linear dynamic range
论文作者
论文摘要
二维材料（2DM）满足了许多应用对硅对硅的需求和低成本的光电检测需求。目前，实现出色的硅2DM PD仍然是非常具有挑战性的。在这里，我们证明了石墨烯 - 硅质 - 石墨烯波导PDS在1.55μm和2μm的波长波段下运行，显示了大规模整合的潜力。对于制造的PDS，测得的响应率分别为1.55μm和1.96μm的波长〜0.15 mA/w和〜0.015 mA/w。特别是，PDS表现出〜33 GHz的高带宽，这是一个超低的黑暗电流，具有数十个Pico-Emperes，高归一化的照片与黑暗 - 往报比（NPDR）为1.63x10^6 w^-1，高线性动态范围以及3μW-1.86 mW（and）的高线性动态范围。根据对波长1.55/2.0μm的波长的测量结果，以及硅 - 格磷酸异质结构的理论模型，据揭示，内部光发射和光子辅助热场发射极大地有助于素质上有助于促进石墨烯 - siliconschottky schottky连接，从而有助于进一步的效果，从而进一步改善了未来的效果。
Two-dimensional materials (2DMs) meet the demand of broadband and low-cost photodetection on silicon for many applications. Currently, it is still very challenging to realize excellent silicon-2DM PDs. Here we demonstrate graphene-silicon-graphene waveguide PDs operating at the wavelength-bands of 1.55 μm and 2 μm, showing the potential for large-scale integration. For the fabricated PDs, the measured responsivities are respectively ~0.15 mA/W and ~0.015 mA/W for the wavelengths of 1.55 μm and 1.96μm. In particular, the PDs exhibit a high bandwidth of ~33 GHz, an ultra-low dark current of tens of pico-amperes, a high normalized photo-to-dark-current ratio (NPDR) of 1.63x10^6 W^-1, as well as a high linear dynamic range of 3 μW-1.86 mW (and beyond) at 1.55 μm. According to the measurement results for the wavelength-bands of 1.55/2.0 μm and the theoretical modeling for the silicon-graphene heterostructure, it is revealed that internal photo-emission and photo-assisted thermionic field emission dominantly contribute to the photoresponse in the graphene-silicon Schottky junctions, which helps the future work to further improve the performance.
