论文标题
shubnikov-de haas和de haas-van alphen振荡在牙齿种植的cosi单晶
Shubnikov-de Haas and de Haas-van Alphen oscillation in Czochralski grown CoSi single crystal
论文作者
论文摘要
据报道，通过Czochralski方法生长的高质量COSI单晶，各向异性转运，Shubnikov-De Haas（SDH）和De Haas-Van Alphen（DHVA）量子振荡研究报告。温度依赖性电阻率表示主导电子电子散射。对于I || [111]和B || [01-1]的磁敏度（MR）达到610％，而I || [01-1]和B || [111]为500％。依赖场的霍尔电阻率的负斜率表明电子是多数载体。从霍尔电导率提取的载体浓度表明没有电子孔补偿。在3D COSI中，发现电子传输寿命大约与量子寿命相同，而在2D电子气体中，长距离散射驱动的运输寿命比量子寿命大得多。从线性和霍尔SDH振荡中，已经计算出有效的质量和丁格温度。 DHVA振荡揭示了三个频率在18（$γ$），558（$α$）和663 t（$β$）），而SDH振荡仅导致两个频率$α$和$β$。在DHVA振荡中观察到的$γ$频率是$γ$点的微小孔口袋。
Anisotropic transport, Shubnikov-de Haas (SdH), and de Haas-van Alphen (dHvA) quantum oscillations studies are reported on a high-quality CoSi single crystal grown by the Czochralski method. Temperature-dependent resistivities indicate the dominating electron-electron scattering. Magnetoresistance (MR) at 2 K reaches 610% for I||[111] and B||[01-1], whereas it is 500% for I||[01-1] and B||[111]. A negative slope in field-dependent Hall resistivity suggests electrons are the majority carriers. The carrier concentration extracted from Hall conductivity indicates no electron-hole compensation. In 3D CoSi, the electron transport lifetime is found to be approximately in the same order as quantum lifetime, whereas in 2D electron gas the long-range scattering drives the transport life much larger than the quantum lifetime. From linear and Hall SdH oscillations the effective masses and Dingle temperatures have been calculated. The dHvA oscillation reveals three frequencies at 18 ($γ$), 558 ($α$) and 663 T ($β$)), whereas, SdH oscillation results in only two frequencies $α$ and $β$. The $γ$ frequency observed in dHvA oscillation is a tiny hole pocket at the $Γ$ point.
