论文标题
$γ$ -GA $ _2 $ o $ $ _3 $的解决障碍
Tackling Disorder in $γ$-Ga$_2$O$_3$
论文作者
论文摘要
ga $ _2 $ o $ _3 $,其多晶型物吸引了越来越多的关注。多态氧化物系统(例如GA $ _2 $ o $ _3 $)的丰富结构空间为电子结构工程提供了潜力,这对于一系列应用(例如电力电子设备)特别感兴趣。 $γ$ -GA $ _2 $ o $ _3 $由于其固有的障碍和产生的复杂结构 - 电子结构关系,在综合,表征和理论中提出了特定的挑战。在这里,密度功能理论与机器学习方法结合使用,以筛选近一百万个潜在的结构,从而开发出$γ$ - 相的可靠原子模型。将理论结果与表面和体积敏感的柔软和硬X射线光学光谱,X射线吸收光谱,光谱椭圆法和光致发光激发光谱实验的实验进行比较。从光谱椭圆法处发现在5.1 eV处,在室温下首次发作,这与PLE光谱法获得的5.17 eV的激发最大值非常吻合,后者在5 K时转移到5.33 eV。这项工作在构成氧化的氧化和整体结构方面呈现了一种局限性的结构。
Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic structure engineering, which is of particular interest for a range of applications, such as power electronics. $γ$-Ga$_2$O$_3$ presents a particular challenge across synthesis, characterisation, and theory due to its inherent disorder and resulting complex structure -- electronic structure relationship. Here, density functional theory is used in combination with a machine learning approach to screen nearly one million potential structures, thereby developing a robust atomistic model of the $γ$-phase. Theoretical results are compared with surface and bulk sensitive soft and hard X-ray photoelectron spectroscopy, X-ray absorption spectroscopy, spectroscopic ellipsometry, and photoluminescence excitation spectroscopy experiments representative of the occupied and unoccupied states of $γ$-Ga$_2$O$_3$. The first onset of strong absorption at room temperature is found at 5.1 eV from spectroscopic ellipsometry, which agrees well with the excitation maximum at 5.17 eV obtained by PLE spectroscopy, where the latter shifts to 5.33 eV at 5 K. This work presents a leap forward in the treatment of complex, disordered oxides and is a crucial step towards exploring how their electronic structure can be understood in terms of local coordination and overall structure.