论文标题
n极性GAN P-N连接二极管具有低理想因素
N-polar GaN p-n junction diodes with low ideality factors
论文作者
论文摘要
高质量的N极性GAN P-N二极管在血浆辅助分子束外延上实现在单晶N晶型GAN散装底物上。室温电流 - 电压特性显示，在4 V时开/关光电流比为10^11，理想因素为1.6。随着温度升高到200 c，明显的理想因素逐渐接近2。在这种高温下，估计震撼的读取壁重组时间为0.32-0.46 ns。测得的电致发光光谱由强板边缘发射组成，而深层和受体相关的发光受到极大抑制。实现了2.4 mV/cm的相对较高的反向分解场，没有场板。这项工作表明，N极度GAN二极管的质量现在正在接近其最先进的GA极线对应物的质量。
High-quality N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy. The room-temperature current-voltage characteristics reveal a high on/off current ratio of 10^11 at 4 V and an ideality factor of 1.6. As the temperature increases to 200 C, the apparent ideality factor gradually approaches 2. At such high temperatures, Shockley-Read-Hall recombination times of 0.32-0.46 ns are estimated. The measured electroluminescence spectrum is dominated by a strong near-band edge emission, while deep level and acceptor-related luminescence is greatly suppressed. A relatively high reverse breakdown field of 2.4 MV/cm without field-plates is achieved. This work indicates that the quality of N-polar GaN diodes is now approaching to that of their state-of-the-art Ga-polar counterparts.
