论文标题
Cu薄膜的微秒紫外线激光退火中的故障模式分析
Failure Mode Analysis in Microsecond UV Laser Annealing of Cu Thin Films
论文作者
论文摘要
表面占地热处理的需求大大增加，尤其是W.R.T三维（3D）集成的电气设备。 UV激光退火（UV-LA）技术很好地解决了这一挑战。特别是UV-LA可以通过在线条或薄膜中扩大金属晶粒来降低电阻率，从而仅照射短时间的互连。但是，必须正确管理电气性能失败的风险，并且尚未深入研究UV-LA的风险。在这项工作中，微秒尺度的UV-LA应用于与熔体或子熔体状态的互连结构（介电/CU/CU/TA/SIO2/SI）相当的堆栈中。研究了（i）Cu扩散到SiO2，（II）o掺入Cu等故障模式，并研究了（iii）Cu和Ta之间的混合。
The need of surface-localized thermal processing is strongly increasing especially w.r.t three-dimensionally (3D) integrated electrical devices. UV laser annealing (UV-LA) technology well addresses this challenge. Particularly UV-LA can reduce resistivity by enlarging metallic grains in lines or thin films, irradiating only the interconnects for short timescales. However, the risk of failure in electrical performance must be correctly managed, and that of UV-LA has not been deeply studied yet. In this work microsecond-scale UV-LA is applied on a stack comparable to an interconnect structure (dielectric/Cu/Ta/SiO2/Si) in either melt or sub-melt regime for grain growth. The failure modes such as (i) Cu diffusion into SiO2, (ii) O incorporation into Cu, and (iii) intermixing between Cu and Ta are investigated.
