论文标题
与单片小收集电极技术示威者Clictd的不同传感器厚度和底物材料的比较
Comparison of different sensor thicknesses and substrate materials for the monolithic small collection-electrode technology demonstrator CLICTD
论文作者
论文摘要
小型收集电极整体CMOS传感器从高信噪比和小型功耗中获利，但由于基于薄薄的高抗性外延层的制造过程，因此由于制造过程而具有有限的主动传感器体积。在本文中，在单片小型电极技术演示器Clictd中研究了主动传感器深度。带电的粒子梁用于研究电荷收集特性和具有不同厚度的设备的性能，以垂直和倾斜粒子的发生率。在具有高抗性的Czochralski底物的CMOS传感器中，发现敏感体积的深度与标准外延材料相比，敏感体积的深度增加了一个因子，并导致命中检测效率以及空间和时间分辨率的显着提高。
Small collection-electrode monolithic CMOS sensors profit from a high signal-to-noise ratio and a small power consumption, but have a limited active sensor volume due to the fabrication process based on thin high-resistivity epitaxial layers. In this paper, the active sensor depth is investigated in the monolithic small collection-electrode technology demonstrator CLICTD. Charged particle beams are used to study the charge-collection properties and the performance of devices with different thicknesses both for perpendicular and inclined particle incidence. In CMOS sensors with a high-resistivity Czochralski substrate, the depth of the sensitive volume is found to increase by a factor two in comparison with standard epitaxial material and leads to significant improvements in the hit-detection efficiency and the spatial and time resolution.
