论文标题
在硅纳米腔上的Tio $ _ {2} $中的Erbium离子的purcell增强
Purcell enhancement of erbium ions in TiO$_{2}$ on silicon nanocavities
论文作者
论文摘要
具有电信光学转变的孤立固态原子缺陷是理想的量子光子发射器和用于长距离量子通信网络应用的自旋量子。原型电信缺陷（例如Erbium）的光子排放率较差，需要使用谐振光腔增强光子。许多传统的ERBIUM离子宿主不适合将其直接与现有的集成光子平台合并，从而限制了基于量子的设备的可扩展制造。在这里，我们通过使用二氧化钛薄膜在硅 - 绝缘子底物上生长的二氧化钛薄膜，对CMOS兼容的电信量线提出了可扩展的方法。从这个异质结构中，我们制造了一维光子晶体腔，显示了超过$ 5 \ times10^{4} $的质量因素，并相应的purcell-earbanced光学发射速率超过200。易于制作的材料平台旨在实现电信量子量表的重要步骤，以实现量表性的构图，以量身定义的构造构建构图。
Isolated solid-state atomic defects with telecom optical transitions are ideal quantum photon emitters and spin qubits for applications in long-distance quantum communication networks. Prototypical telecom defects such as erbium suffer from poor photon emission rates, requiring photonic enhancement using resonant optical cavities. Many of the traditional hosts for erbium ions are not amenable to direct incorporation with existing integrated photonics platforms, limiting scalable fabrication of qubit-based devices. Here we present a scalable approach towards CMOS-compatible telecom qubits by using erbium-doped titanium dioxide thin films grown atop silicon-on-insulator substrates. From this heterostructure, we have fabricated one-dimensional photonic crystal cavities demonstrating quality factors in excess of $5\times10^{4}$ and corresponding Purcell-enhanced optical emission rates of the erbium ensembles in excess of 200. This easily fabricated materials platform represents an important step towards realizing telecom quantum memories in a scalable qubit architecture compatible with mature silicon technologies.
