论文标题
对于低温应用，基于GAN的hemts的表征降低到4.2 k
Characterization of GaN-based HEMTs Down to 4.2 K for Cryogenic Applications
论文作者
论文摘要
基于GAN的HEMT（高电动动力晶体管）的低温性能是通过直接电流（DC）（DC）和低频噪声（LFN）特征进行系统研究的，温度（T）在300 K至4.2 K范围内。电流和肖特基屏障高度得到了全面的特征，并且对温度依赖性行为进行了统计分析。此外，该设备的LFN在测得的温度范围内显示出从10 Hz到10 kHz的1/F噪声的明显行为，并且在低温温度下可以显着降低。这些结果非常重要，可以激励对基于GAN的冷冻设备和系统进行进一步研究。
The cryogenic performance of GaN-based HEMTs (high-electron-mobility transistors) is systematically investigated by the direct current (DC) and low-frequency noise (LFN) characteristics within the temperature (T) range from 300 K to 4.2 K. The important electrical merits of the device, including drain saturation current (IDsat), on-resistance (RON), transductance, subthreshold swing (SS), gate leakage current, and Schottky barrier height, are comprehensively characterized and their temperature-dependent behavior was statistically analyzed. In addition, the LFN of the device shows an evident behavior of 1/f noise from 10 Hz to 10 kHz in the measured temperature range and can be significantly reduced at cryogenic temperature. These results are of great importance to motivate further studies into the GaN-based cryo-devices and systems.
