论文标题
caging-pnict诱导的skutterudites irx3中的超导性（x = as，p）
Caging-Pnictogen-Induced Superconductivity in Skutterudites IrX3 (X = As, P)
论文作者
论文摘要
在这里，我们报告了一种新的化合物XΔIR4x12-δ（X = P，AS），这是第一个孔掺杂的Skutterudites超导体。我们使用扫描透射电子显微镜（STEM）提供笼子作为原子的原子分辨率图像。通过在高压下将原子插入笼子结构中，超导性在IRAS3（IRP3）中以最大过渡温度（TC）为4.4 K（4.8 K）出现。与所有掺杂电子的skutterudites相反，XΔIR4x12-δ的费米水平周围的电子状态以笼子X原子为主，可以用简单的以身体为中心的紧密紧密结合模型来描述，这意味着一种独特的削皮机制。我们的密度功能理论（DFT）计算揭示了依赖压力依赖性的局部phonon模式与TC增强之间的密切关系。 XΔIR4X12-δ的发现提供了一个竞技场，以研究未知的孔掺杂型Skutterudites的领域，此处提出的方法代表了一种新的载流子掺杂笼中的策略，而无需引入额外的元素。
Here we report on a new kind of compound, XδIr4X12-δ (X = P, As), the first hole-doped skutterudites superconductor. We provide atomic resolution images of the caging As atoms using scanning transmission electron microscopy (STEM). By inserting As atoms into the caged structure under a high pressure, superconductivity emerges with a maximum transition temperature (Tc) of 4.4 K (4.8 K) in IrAs3 (IrP3). In contrast to all of the electron-doped skutterudites, the electronic states around the Fermi level in XδIr4X12-δ are dominated by the caged X atom, which can be described by a simple body-centered tight-binding model, implying a distinct paring mechanism. Our density functional theory (DFT) calculations reveal an intimate relationship between the pressure-dependent local-phonon mode and the enhancement of Tc. The discovery of XδIr4X12-δ provides an arena to investigate the uncharted territory of hole-doped skutterudites, and the method proposed here represents a new strategy of carrier doping in caged structures, without introducing extra elements.
