论文标题
通过拉曼光谱法的半导体单壁碳纳米管的绝对量化Sp $^{3} $缺陷
Absolute Quantification of sp$^{3}$ Defects in Semiconducting Single-Wall Carbon Nanotubes by Raman Spectroscopy
论文作者
论文摘要
具有发光SP $^{3} $缺陷的半导体单壁碳纳米管（SWCNTS）的功能化在近红外创造了红移的发射特征，并增强其光发光量子量产率（PLQys）。虽然已经开发了用于选择性引入SP $^{3} $缺陷的多个合成路线，但无法确切量化SWCNT晶格上缺陷的数量方便的指标。在这里，我们基于从PLQY测量值提取的集成拉曼D/g $^{+} $信号比和缺陷密度的线性相关性提出了直接而简单的量化协议。通过对低温温度下的单纳米管发射光谱的统计分析来证实，该方法可以对（6,5）SWCNT中的SP $^{3} $缺陷密度进行定量评估，其误差为$ \ pm $ $ \ pm $ 3损失$ 3，每个微米3级缺陷及其振动器强度的确定用于不同的缺陷类型。开发的协议仅需要标准的拉曼光谱，并且独立于缺陷构型，分散溶剂和纳米管长度。
The functionalization of semiconducting single-wall carbon nanotubes (SWCNTs) with luminescent sp$^{3}$ defects creates red-shifted emission features in the near-infrared and boosts their photoluminescence quantum yields (PLQYs). While multiple synthetic routes for the selective introduction of sp$^{3}$ defects have been developed, a convenient metric to precisely quantify the number of defects on a SWCNT lattice is not available. Here, we present a direct and simple quantification protocol based on a linear correlation of the integrated Raman D/G$^{+}$ signal ratios and defect densities as extracted from PLQY measurements. Corroborated by a statistical analysis of single-nanotube emission spectra at cryogenic temperature, this method enables the quantitative evaluation of sp$^{3}$ defect densities in (6,5) SWCNTs with an error of $\pm$ 3 defects per micrometer and the determination of oscillator strengths for different defect types. The developed protocol requires only standard Raman spectroscopy and is independent of the defect configuration, dispersion solvent and nanotube length.
