论文标题
半导体EUMG $ _2 $ sb $ _2 $单晶的A型抗铁磁订单
A-type antiferromagnetic order in semiconducting EuMg$_2$Sb$_2$ single crystals
论文作者
论文摘要
基于欧盟的Zintl-phase材料EUA $ _2 $ pn $ _2 $(a = mg,in,cd,zn; pn = bi,sb,as,p)由于磁性和乐队拓扑的复杂相互作用而引起了近期的重大兴趣。在这里,我们研究了EUMG $ _2 $ _2 $ _2 $ sb $ _2 $的分层Zintl-phase单晶的电子,磁性和电子特性,以及Trigonal Caal $ _2 $ _2 $ _2 $ _2 $ crystal结构(太空集团$ P \ bar bar {3} m1 $)。电阻率测量与角度分辨光发射光谱(ARPES)的研究相辅相成,在高温下具有固有电导率的激活行为,表明具有370 MEV的狭窄能量隙的半导体电子基态。 Magnetic susceptibility and zero-field heat-capacity measurements indicate that the compound undergoes antiferromagnetic (AFM) ordering at the Neel temperature $T_{\rm N}$ = 8.0(2) K. Zero-field neutron-diffraction measurements reveal that the AFM ordering is A-type where the Eu ordered moments (Eu$^{2+}$, S= 7/2)在AB平面层中排列的在AB平面中与欧盟矩在相邻层中的欧盟矩对齐的抗抗铁磁性相对。我们还发现,AB平面内三角AFM域中的EU-MOMMOMMOMMOMMOMEMENT重新定位发生在$ t _ {\ rm n} $下方,低场<0.05 t,由于平面内各向异性很小。尽管据报道,据报道,据报道,在EUMG $ _2 $ _2 $ _2 $ _2 $中观察到狭窄的差距半导体行为,据报道,同源半金属EUMG $ _2 $ bi $ _2 $ to tosing dirac Surface状态,这意味着旋转轨道耦合在调谐这些材料的电子状态方面的强大作用。
Eu-based Zintl-phase materials EuA$_2$Pn$_2$ (A = Mg, In, Cd, Zn; Pn = Bi, Sb, As, P) have generated significant recent interest owing to the complex interplay of magnetism and band topology. Here, we investigated the electronic, magnetic, and electronic properties of the layered Zintl-phase single crystals of EuMg$_2$Sb$_2$ with the trigonal CaAl$_2$Si$_2$ crystal structure (space group $P\bar{3}m1$). Electrical resistivity measurements complemented with angle-resolved photoemission spectroscopy (ARPES) studies find an activated behavior with the intrinsic conductivity at high temperatures indicating a semiconducting electronic ground state with a narrow energy gap of 370 meV. Magnetic susceptibility and zero-field heat-capacity measurements indicate that the compound undergoes antiferromagnetic (AFM) ordering at the Neel temperature $T_{\rm N}$ = 8.0(2) K. Zero-field neutron-diffraction measurements reveal that the AFM ordering is A-type where the Eu ordered moments (Eu$^{2+}$, S= 7/2) arranged in ab-plane layers are aligned ferromagnetically in the ab plane with the Eu moments in adjacent layers aligned antiferromagnetically. We also find that Eu-moment reorientation in the trigonal AFM domains within the ab planes occurs below $T_{\rm N}$ at low fields < 0.05 T due to very small in-plane anisotropy. Although isostructural semimetallic EuMg$_2$Bi$_2$ is reported to host Dirac surface states, the observation of narrow-gap semiconducting behavior in EuMg$_2$Sb$_2$ implies a strong role of spin-orbit coupling in tuning the electronic states of these materials.