论文标题
用于形成超导纳米接触的电介质的电故障
Electrical breakdown of a dielectric for the formation of a superconducting nanocontact
论文作者
论文摘要
介电纳米层的电衰减膜电极之间的电衰减和50％的im依 - 和50％TIN的合金形成了电极之间该合金的桥梁。桥电阻取决于故障电流。桥的长度等于介电（30 nm）的厚度，其直径为25 nm。合金在0 K时的计算相干长度接近桥梁的长度。在0 K温度下电阻为1Ω的桥的计算出的临界电流为2 mA。得出的结论是，这样的桥应具有约瑟夫森接触的特性，其温度低于合金的临界温度（6.5 K）。
Electrical breakdown of the dielectric nanolayer between film electrodes of niobium and an alloy of 50% indium and 50% tin forms a bridge of this alloy between the electrodes. The bridge resistance depends on the breakdown current. The length of the bridge is equal to the thickness of the dielectric (30 nm), and its diameter is 25 nm. The calculated coherence length of the alloy at 0 K is close to the length of the bridge. The calculated critical current of a bridge with a resistance of 1 Ω at a temperature of 0 K is 2 mA. It is concluded that such a bridge should have the properties of a Josephson contact at a temperature lower than the critical temperature of the alloy (6.5 K).
