论文标题
栅极定义的Inas/Al纳米线中Andreev结合状态的非局部电导光谱
Nonlocal conductance spectroscopy of Andreev bound states in gate-defined InAs/Al nanowires
论文作者
论文摘要
使用局部和非局部隧道光谱法测量了三末端半导体 - 导管杂交纳米线中Andreev结合状态（ABS）的电荷特征。该设备是使用带有几个栅极定义侧探针的二维异质结构制造的。发现ABS随栅极电压的函数而振荡左右，其电荷的修改与ABS的总Bardeen-Cooper-Schrieffer（BCS）电荷的理论期望一致。
The charge character of Andreev bound states (ABSs) in a three-terminal semiconductor-superconductor hybrid nanowire was measured using local and nonlocal tunneling spectroscopy. The device is fabricated using an epitaxial InAs/Al two-dimensional heterostructure with several gate-defined side probes. ABSs are found to oscillate around zero as a function of gate voltage, with modifications of their charge consistent with theoretical expectations for the total Bardeen-Cooper- Schrieffer (BCS) charge of ABSs.
