论文标题
横向几何形状对Si和Ge纳米线的导热率的影响
Effects of transverse geometry on the thermal conductivity of Si and Ge nanowires
论文作者
论文摘要
我们探讨了几何形状对硅和锗纳米线的热导率（KAPPA）的影响，其长度在10-120 nm和直径高达5-6 nm之间。为此，我们使用Tersoff Interatomic电位使用LAMMPS软件进行分子动力学模拟。我们考虑具有多边形横截面的纳米线，并讨论横向几何学对导热率的影响。我们还考虑了SI/GE和GE/SI的管状（空心）纳米线以及核/壳组合，并将核/壳结构的热传输与分离的核心和壳体组件的热传输。
We explore the effects of geometry on the thermal conductivity (kappa) of silicon and germanium nanowires, with lengths between 10-120 nm and diameters up to 5-6 nm. To this end we perform molecular dynamics simulations with the LAMMPS software, using Tersoff interatomic potentials. We consider nanowires with polygonal cross section and we discuss the effect of the transverse geometry on the thermal conductivity. We also consider tubular (hollow) nanowires and core/shell combinations of Si/Ge and Ge/Si, and we compare the heat transport of the core/shell structure with that of the separated core and shell components.
