论文标题
确定性量子点基于CMOS兼容的碳化硅光子学的杂种整合基于确定性量子点的单光子源
Hybrid integration of deterministic quantum dots-based single-photon sources with CMOS-compatible silicon carbide photonics
论文作者
论文摘要
薄膜4H-Silicon碳化物（4H-SIC）由于其高CMOS技术兼容性和较大的光学非线性而成为实现大型光学量子电路的竞争者。但是，在绝缘体（4H-SICOI）上生产晶圆尺度的4H-SIC薄膜，以使光子电路的密集整合以及有效的确定性量子发射器的有效耦合，这对于可扩展的量子光子学至关重要。在这里，我们证明了基于INGAAS量子点（QD）的单光子源（SPSS）的混合整合，并与由ION切片技术制备的晶圆尺度4H-SIC光子芯片。通过设计双层垂直耦合器，我们认识到杂交量子光子芯片中单光子发射的产生和高效路由。此外，我们通过制造1x2多模式干涉仪（MMI）实现了芯片集成的束弹奏操作，用于触发单个光子，对称功率分配比为50:50。通过离子切片技术制备的4H-SIC光子芯片上的非均匀演示基于QDS的SPS构成了朝着CMOS兼容的，快速的可重新配置量子光子电路和确定性SPSS的重要步骤。
Thin film 4H-silicon carbide (4H-SiC) is emerging as a contender for realizing large-scale optical quantum circuits due to its high CMOS technology compatibility and large optical nonlinearities. Though, challenges remain in producing wafer-scale 4H-SiC thin film on insulator (4H-SiCOI) for dense integration of photonic circuits, and in efficient coupling of deterministic quantum emitters that are essential for scalable quantum photonics. Here we demonstrate hybrid integration of self-assembled InGaAs quantum dots (QDs) based single-photon sources (SPSs) with wafer-scale 4H-SiC photonic chips prepared by ion slicing technique. By designing a bilayer vertical coupler, we realize generation and highly efficient routing of single-photon emission in the hybrid quantum photonic chip. Furthermore, we realize a chip-integrated beamsplitter operation for triggered single photons through fabricating a 1x2 multi-mode interferometer (MMI) with a symmetric power splitting ratio of 50:50. The successful demonstration of heterogeneously integrating QDs-based SPSs on 4H-SiC photonic chip prepared by ion slicing technique constitutes an important step toward CMOS-compatible, fast reconfigurable quantum photonic circuits with deterministic SPSs.
