论文标题
在MOCVD生长过程中，将镁掺入由有意大量氢调节的GAN中
Incorporation of Magnesium into GaN Regulated by Intentionally Large Amounts of Hydrogen during Growth by MOCVD
论文作者
论文摘要
用Mg原子掺杂的GAN层的金属有机化学蒸气（MOCVD），已执行[mg] $ \ sim2 \ times 10^{19} $ cm $^{ - 3} $的最佳最佳水平。在一系列MOCVD运行中，除了故意更大的氢载体气流流入反应堆中外，还保持了运行条件，包括前体的温度和流速。通过在这项研究中采用25 SLM的最大氢流，在没有任何热激活治疗的情况下，由$ p \ sim2 \ times 10^{17} $ cm $^{ - 3} $的室温孔浓度证明了浓度的Mg掺杂GAN层的性能。实验证据表明，在MOCVD生长过程中，大量氢可以以很大的方式调节MG原子中的掺入GAN中，以便MGH复合物可以与显性且显然具有电动电动分离的MGGA受体共存。
Metalorganic chemical vapor deposition (MOCVD) of GaN layers doped with Mg atoms to the recognized optimum level of [Mg] $\sim2 \times 10^{19}$ cm$^{-3}$ has been performed. In a sequence of MOCVD runs, operational conditions, including temperature and flow rate of precursors, have been maintained except for intentionally larger flows of hydrogen carrier gas fed into the reactor. By employing the largest hydrogen flow of 25 slm in this study, the performance of the as-grown Mg-doped GaN layers has been certified by a room-temperature hole concentration of $p\sim2 \times 10^{17}$ cm$^{-3}$ in the absence of any thermal activation treatment. Experimental evidence is delivered that the large amounts of hydrogen during the MOCVD growth can regulate the incorporation of the Mg atoms into GaN in a significant way so that MgH complex can co-exist with a dominant and evidently electrically active isolated MgGa acceptor.
