论文标题
石墨烯光学非线性:从三阶到非扰动电动力学状态
Graphene optical nonlinearity: From the third-order to the non-perturbative electrodynamic regime
论文作者
论文摘要
像在石墨烯 - 复合纳米光量集成的波导的情况下一样,开发了用于沿单层的超快脉冲传播的非扰动模型,用于研究超快脉冲传播。该石墨烯“热电子”模型(GHEM)基于早期工作,基于2D半导体的费米 - 迪拉克框架,该框架主要针对自由空间激光束照明下单层的稳态吸收反应。我们的扩展使GHEM适应了在强烈的PS-Pulse激发下沿石墨烯单层沿石墨烯单层相互作用,从而导致载体密度饱和度方案。我们首先提供了“经典”扰动三阶非线性响应的定量概述,然后研究石墨烯作为GHEM参数的静态和瞬态响应,重点是单层质量和电压操作。将这些结果与可饱和吸收和非线性折射的现象学模型进行了比较,这与最近的实验作品很好地一致。总之,GHEM在单个多参数框架中统一了实验观察到的吸收和折射光学非线性,因此可以评估诸如衍射量限制的纳米光导向器等结构中电压可调的轻质感相互作用。这种形式主义可以很容易地用于THZ频率,适用于多渠道(例如泵浦探针)非线性效应,或开发以包括载体和晶格 - 温度扩散以扩展其有效性阈值。
A non-perturbative model for graphene optical nonlinearity is developed for the study of ultrafast pulse propagation along a monolayer, as in the case of graphene-comprising nanophotonic integrated waveguides. This graphene `hot electron' model (GHEM) builds upon earlier work, based on the Fermi-Dirac framework for 2D semiconductors, which was aimed mainly at steady-state absorptive response of a monolayer under free-space laser-beam illumination. Our extension adapts the GHEM to in-plane light-matter interaction along graphene monolayers under intense ps-pulse excitation that leads to the carrier-density saturation regime. We first provide a quantitative overview of the `classic' perturbative third-order nonlinear response and then study the static and transient response of graphene as a function of the GHEM parameters, with focus on the monolayer quality and voltage-tunability. These results are compared to phenomenological models for saturable absorption and nonlinear refraction, showing good agreement with recent experimental works. In conclusion, the GHEM unifies the experimentally observed absorptive and refractive optical nonlinearities in a single multi-parametric framework therefore enabling the evaluation of the voltage-tunable light-matter interaction in structures such as diffraction-limited nanophotonic waveguides. This formalism can be readily employed to THz frequencies, adapted to multi-channel (e.g. pump-probe) nonlinear effects, or developed to include carrier and lattice-temperature diffusion to extend its validity threshold.