论文标题
基于机制的Mn掺杂\ b {eta} -ga2o3中基于机制的调整通过退火气氛
Mechanism-based Tuning of Room-temperature Ferromagnetism in Mn-doped \b{eta}-Ga2O3 by Annealing Atmospher
论文作者
论文摘要
研究了带有室温的铁磁性（RTFM）的Mn掺杂\ b {eta} -ga2O3（GMO）膜，由聚合物辅助的沉积和退火大气（空气或纯O2气体）对其结构和物理性质的影响合成。表征表明，各种价状态和样品的晶格常数的空置缺陷和Mn掺杂剂的浓度均由退火气氛调节。 Notably, the samples annealed in air (GMO-air) exhibit a saturation magnetization as strong as 170% times that of the samples annealed in pure O2 gas (GMO-O2), which can be quantitatively explained by oxygen vacancy (VO) controlled ferromagnetism due to bound magnetic polarons established between delocalized hydrogenic electrons of VOs and local magnetic moments of Mn2+, Mn3+,样品中的Mn4+离子。我们的结果提供了对GA2O3中RTFM的基于机制的调整的见解，并且可能对相关的自旋材料的设计，制造和应用很有用。
Mn-doped \b{eta}-Ga2O3 (GMO) films with room-temperature ferromagnetism (RTFM) are synthesized by polymer-assisted deposition and the effects of annealing atmosphere (air or pure O2 gas) on their structures and physical properties are investigated. The characterizations show that the concentrations of vacancy defects and Mn dopants in various valence states and lattice constants of the samples are all modulated by the annealing atmosphere. Notably, the samples annealed in air (GMO-air) exhibit a saturation magnetization as strong as 170% times that of the samples annealed in pure O2 gas (GMO-O2), which can be quantitatively explained by oxygen vacancy (VO) controlled ferromagnetism due to bound magnetic polarons established between delocalized hydrogenic electrons of VOs and local magnetic moments of Mn2+, Mn3+, and Mn4+ ions in the samples. Our results provide insights into mechanism-based tuning of RTFM in Ga2O3 and may be useful for design, fabrication, and application of related spintronic materials.
