论文标题
次级电子电子束诱导电流（seabic）成像中的对比机制
Contrast mechanisms in secondary electron e-beam induced current (SEEBIC) imaging
论文作者
论文摘要
在过去的几年中，在扫描透射电子显微镜（STEM）中成像的新模式在允许直接可视化样品电导率和电气连接性的过程中引起了人们的注意。当电子束（电子束）集中在茎中的样品上时，会产生次级电子（SES）。如果样品是导电的并电到到放大器上的，则可以将SE电流作为电子束位置的函数测量。这种情况类似于较知名的扫描电子显微镜（SEM）技术，电子束诱导的电流（EBIC）成像，除了茎中的信号是由SES发射产生的，因此seebic的名称，因此在这种情况下，电流流向相对方向。在这里，我们简要审查了该领域的最新工作，检查与Seebic相关的各种对比生成机制，并说明了其用于表征石墨烯纳米替宾设备的使用。
Over the last few years, a new mode for imaging in the scanning transmission electron microscope (STEM) has gained attention as it permits the direct visualization of sample conductivity and electrical connectivity. When the electron beam (e-beam) is focused on the sample in the STEM, secondary electrons (SEs) are generated. If the sample is conductive and electrically connected to an amplifier, the SE current can be measured as a function of the e-beam position. This scenario is similar to the better-known scanning electron microscopy (SEM)-based technique, electron beam induced current (EBIC) imaging except the signal in STEM is generated by the emission of SEs, hence the name SEEBIC, and in this case the current flows in the opposite direction. Here, we provide a brief review of recent work in this area, examine the various contrast generation mechanisms associated with SEEBIC, and illustrate its use for the characterization of graphene nanoribbon devices.
