论文标题
van der waals在CVD外延石墨烯/6H-SIC上的空气稳定的无准准站立硅层
Van der Waals heteroepitaxy of air stable quasi-free standing silicene layers on CVD epitaxial graphene/6H-SiC
论文作者
论文摘要
石墨烯由惰性的热稳定材料和原子平坦，无键的无键表面组成，本质上是范德华的理想模板层，用于二维材料（例如硅烯）的杂质杂质。但是，根据合成方法和生长参数，石墨烯（GR）底物可以在单个样品上显示各种表面结构，厚度，缺陷和台阶高度。这些结构明显影响外延层的生长模式，例如将逐层生长变成由缺陷辅助成核促进的Volmer-Weber生长。在这项工作中，通过原子力显微镜（AFM），扫描隧道显微镜（STM），X-Ray Poselectron Sperroscopy（Xps seploscopy（xps），scanning Electroscopy（xps），scan seploscopy（xps），扫描隧道显微镜（xps），扫描隧道显微镜（XPS），scanning tunneling seploscopy（xps），研究了6H-SIC（0001）底物上硅在6H-SIC（0001）底物上的硅在6H-SIC（0001）上的生长的生长。测量。结果表明，具有单个表面结构的全尺度几乎无缺陷的1 ml GR的完美控制，分子束外延（MBE）的超清洁条件是硅的沉积，代表了确保在外套石墨烯上延伸硅片的生长的关键先决条件。
Graphene, consisting of an inert, thermally stable material with an atomically flat, dangling bond-free surface is by essence an ideal template layer for van der Waals heteroepitaxy of two-dimensional materials such as silicene. However, depending on the synthesis method and growth parameters, graphene (Gr) substrates could exhibit, on a single sample, various surface structures, thicknesses, defects, and step heights. These structures noticeably affect the growth mode of epitaxial layers, e.g. turning the layer-by-layer growth into the Volmer-Weber growth promoted by defect-assisted nucleation. In this work, the growth of silicon on chemical vapor deposited epitaxial Gr (1 ML Gr/1ML Gr buffer) on 6H-SiC(0001) substrate is investigated by a combination of atomic force microscopy (AFM), scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and Raman spectroscopy measurements. It is shown that the perfect control of full-scale almost defect-free 1 ML Gr with a single surface structure and the ultra-clean conditions for molecular beam epitaxy (MBE) deposition of silicon represent key prerequisites for ensuring the growth of extended silicene sheets on epitaxial graphene.
