论文标题
基于二氧化钒的电气调节剂EPSILON-NEAR-NEAR-NEAR-NEAR-NANONOWIRE TRIPL-cAVITY在硅波导中
Electro-optic modulator based on Vanadium dioxide epsilon-near-zero vertical nanowire triple-cavity in Silicon Waveguide
论文作者
论文摘要
我们提出了一个电气调节器，利用在硅硅硅靠近的Epsilon中运行的一系列二氧化钒纳米棒，因为积极的开关材料集成在硅波导中。调节器利用二氧化钒的绝缘体到金属过渡，以实现具有宽的操作波长的19.7 dB/micon的稳健调制深度。使用模拟，我们证明了如何通过改变纳米棒几何形状来调节超材料的有效介电常数。本文还提出了一种新型的六角阵列设计，该设计可实现低插入损失，同时保持强大的调制深度。结果提供了有关具有高操作频率和低插入损失的超紧凑调制器设计的洞察力。
We present an electro-optic modulator exploiting an array of Vanadium dioxide nanorods operating in the epsilon near regime as the active switching material integrated in a silicon waveguide. The modulator takes advantage of the insulator-to-metal transition of Vanadium dioxide to achieve a robust modulation depth of 19.7 dB/micron with a broad wavelength of operation. Using simulations, we demonstrate how the effective permittivity of the metamaterial can be tuned to a near-zero value by varying the nanorod geometry. The paper also proposes a novel hexagonal array design which achieves low insertion losses while retaining a strong modulation depth. The results provide insight into the design of ultra-compact modulators with high operation frequencies and low insertion losses.
