论文标题
2D磁性半导体中的准1D电子传输
Quasi 1D electronic transport in a 2D magnetic semiconductor
论文作者
论文摘要
我们通过CRSBR的去角质多层(一种2D半导体,由于其磁性吸引人们的注意力)研究了电子传输。我们发现一种极为明显的各向异性,它以沿平面内\ textit {a}和\ textit {b}晶体学方向测量的所有数量的定性和定量差异表现出来。特别是,我们观察到电导率$σ_A$和$σ_b$在温度和栅极电压上的依赖性不同,并伴随着其值的数量级差异($σ_b$/$σ_A\ cdot10^2-10^2-10^5 $在低温和大型栅极的栅极上)。我们还发现,在这两个方向上纵向磁性的行为不同,并且在横向电阻测量中完全没有霍尔效应。这些观察结果似乎与2D掺杂半导体的常规频带传输方面的描述不兼容。观察到的现象学 - 加上我们在能量分辨的光电流测量中检测到的一维范霍夫奇异性的明确特征 - 表明,通过弱且与常规2D频带运输相比,通过弱且无效地构造的1D Wires,通过CRSBR多层面的电子传输可以通过CRSBR多层次进行更好的解释。我们得出的结论是,CRSBR是第一个显示出明显的准1D电子传输特性的2D半导体。
We investigate electronic transport through exfoliated multilayers of CrSBr, a 2D semiconductor that is attracting attention because of its magnetic properties. We find an extremely pronounced anisotropy that manifests itself in qualitative and quantitative differences of all quantities measured along the in-plane \textit{a} and \textit{b} crystallographic directions. In particular, we observe a qualitatively different dependence of the conductivities $σ_a$ and $σ_b$ on temperature and gate voltage, accompanied by orders of magnitude differences in their values ($σ_b$/$σ_a \approx 3\cdot10^2-10^5$ at low temperature and large negative gate voltage). We also find a different behavior of the longitudinal magnetoresistance in the two directions, and the complete absence of the Hall effect in transverse resistance measurements. These observations appear not to be compatible with a description in terms of conventional band transport of a 2D doped semiconductor. The observed phenomenology -- together with unambiguous signatures of a 1D van Hove singularity that we detect in energy resolved photocurrent measurements -- indicate that electronic transport through CrSBr multilayers is better interpreted by considering the system as formed by weakly and incoherently coupled 1D wires, than by conventional 2D band transport. We conclude that CrSBr is the first 2D semiconductor to show distinctly quasi 1D electronic transport properties.