论文标题
SR掺杂的BI2SE3薄膜中疾病诱导的线性磁倍率
Disorder-induced linear magnetoresistance in Sr-doped Bi2Se3 thin films
论文作者
论文摘要
SR掺杂的BI2SE3薄膜被称为拓扑超导体的潜在候选者。发现具有各种兴奋剂X的SRXBI2SE3膜的磁化（MR）在低磁场处的弱抗静电（WAL）主导，而最初主导的MR的经典MR几乎被完全抑制。相比之下，已经观察到所有样品的MR在高磁场处被线性磁磁性（LMR）主导。 LMR具有对载体移动性的线性依赖性，可以通过教区 - 小木模型成功解释。这表明LMR源自掺杂的BI2SE3膜中SR掺杂原子引起的迁移率波动。
Sr-doped Bi2Se3 thin films was known as a potential candidate of topological superconductor. The magnetoresistance (MR) of SrxBi2Se3 films with various doping concentrations x were found to be dominated by weak antilocalization (WAL) at low magnetic fields, whereas the classical MR, which originally dominated the MR, was almost completely suppressed. In contrast, the MR of all samples has been observed to be dominated by linear magnetoresistance (LMR) at high magnetic fields. The LMR, having the linear dependence on carrier mobility, can be successfully explained by the Parish-Littlewood model. This indicates that LMR originates from mobility fluctuation induced by Sr dopant atoms in doped Bi2Se3 films.
