论文标题
GATE可调节异常大厅效应（111）Laalo $ _3 $/srtio $ _3 $接口
Gate tunable anomalous Hall effect at (111) LaAlO$_3$/SrTiO$_3$ interface
论文作者
论文摘要
我们介绍了氧化物界面中可调式异常大厅效应（AHE）的理论预测，这是自旋轨道耦合的标志。在存在外部磁场的情况下，在低温下观察到的AHE来自费米表面上电子的浆果曲率的复杂结构，并且很大程度上取决于占领带的轨道特征。结果的详细图片来自多播种低能模型，具有概括的Rashba相互作用，该模型支持特征性的平面外旋转和轨道纹理。我们讨论了（111）srtio $ _3 $异质结构接口中优化内在AHE的策略。
We present the theoretical prediction of a gate tunable anomalous Hall effect (AHE) in an oxide interface as a hallmark of spin-orbit coupling. The observed AHE at low-temperatures in the presence of an external magnetic field emerges from a complex structure of the Berry curvature of the electrons on the Fermi surface and strongly depends on the orbital character of the occupied bands. A detailed picture of the results comes from a multiband low-energy model with a generalized Rashba interaction that supports characteristic out-of-plane spin and orbital textures. We discuss strategies for optimizing the intrinsic AHE in (111) SrTiO$_3$ heterostructure interfaces.
