论文标题

直接检测带有sipm的带电颗粒

Direct detection of charged particles with SiPMs

论文作者

Carnesecchi, F., Vignola, G., Agrawal, N., Alici, A., Antonioli, P., Arcelli, S., Bellini, F., Cavazza, D., Cifarelli, L., Colocci, M., Durando, S., Ercolessi, F., Garbini, M., Giacalone, M., Hatzifotiadou, D., Jacazio, N., Margotti, A., Malfattore, G., Nania, R., Noferini, F., Pinazza, O., Preghenella, R., Ricci, R., Rignanese, L., Rubini, N., Scapparone, E., Scioli, G., Strazzi, S., Tripathy, S., Zichichi, A.

论文摘要

首次以系统的方式研究了被MIP带电粒子横穿的硅光电培养基的直接响应。使用梁测试数据,已经测量了时间分辨率和串扰概率。还报道了通过激光束对SIPM的表征。对于不同传感器获得的结果表明,在40-70 PS附近的测量时间分辨率。尽管预计颗粒每次事件仅遍历一小撮,但在不同传感器上的串扰测量表明,与传感器噪声相关的粒子相对于一个意外的值。

The direct response of Silicon PhotoMultipliers being traversed by a MIP charged particle have been studied in a systematic way for the first time. Using beam test data, time resolution and the crosstalk probability have been measured. A characterization of the SiPM by means of a laser beam is also reported. The results obtained for different sensors indicate a measured time resolution around 40-70 ps. Although particles are expected to traverse only one SPAD per event, crosstalk measurements on different sensors indicate an unexpected higher value with respect to the one related to the sensor noise.

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