论文标题
拓扑缺陷在基于三税的分子石墨素中引起的高自旋四重奏状态
Topological Defects Induced High-Spin Quartet State in Truxene-Based Molecular Graphenoids
论文作者
论文摘要
石墨烯材料中的拓扑缺陷引入了外来特性,在其无缺陷的对应物中没有根本重要性和技术意义。尽管已经广泛研究了个体拓扑缺陷,但源自组织良好的多个拓扑缺陷的集体磁性行为仍然是一个巨大的挑战。在这里,我们通过使用扫描隧道显微镜和非接触式原子力显微镜研究了源自三个基于三兆基的分子石墨素化的五角形拓扑缺陷的集体磁性能。通过通过原子操纵将五角大楼缺陷处的氢原子分离出来,将未配对的$π$电子一一引入三透明质分子石墨素的芳香拓扑。扫描隧道光谱测量以及密度功能理论的计算表明,未配对的电子是铁磁性耦合的,形成了s = 3/2的集体高旋转四重奏状态。我们的工作表明,可以通过分子石墨素中的工程定期图案拓扑缺陷来实现集体旋转顺序,为设计师一维铁磁旋转链和二维铁磁网络提供了一个新的平台。
Topological defects in graphene materials introduce exotic properties which are absent in their defect-free counterparts with both fundamental importance and technological implications. Although individual topological defects have been widely studied, collective magnetic behaviors originating from well-organized multiple topological defects remain a great challenge. Here, we studied the collective magnetic properties originating from three pentagon topological defects in truxene-based molecular graphenoids by using scanning tunneling microscopy and non-contact atomic force microscopy. Unpaired $π$ electrons are introduced into the aromatic topology of truxene molecular graphenoids one by one by dissociating hydrogen atoms at the pentagon defects via atom manipulation. Scanning tunneling spectroscopy measurements together with density functional theory calculations suggest that the unpaired electrons are ferromagnetically coupled, forming a collective high-spin quartet state of S=3/2. Our work demonstrates that the collective spin ordering can be realized through engineering regular patterned topological defects in molecular graphenoids, providing a new platform for designer one-dimensional ferromagnetic spin chains and two-dimensional ferromagnetic networks.