论文标题
观察拓扑半准候选PDSB $ _ {2} $的薄膜中弱反定位的观察
Observation of Weak Anti-localization in thin films of the Topological Semimetal Candidate PdSb$_{2}$
论文作者
论文摘要
我们报告了一项关于拓扑半金属候选PDSB $ _ {2} $（PS）的薄膜的磁传输研究的结果。我们观察到在低温下对磁导率的正校正，这是弱反定位（WAL）的标志。我们分析了hikami-larkin-nagaoka（HLN）理论中的WAL数据，并提取了其温度依赖性揭示各种相位弛豫机制的倾向长度（l $ _ϕ $）。从WAL效应中，我们还提取$α$（运输渠道的数量）。 $α$随温度和薄膜厚度的演变反映了不同导电通道（拓扑表面通道和大型通道）之间的耦合如何变化。另外，在低温下的温度依赖性电导率中观察到电子电子相互作用（EEI）效应。从EEI效应中，我们可以获得对传输通道数量的替代估计，并获得与WAL效应分析获得的值相似的值。这表明，在无序膜中，EEI效应可用于获取有关彼此及其与批量状态的拓扑表面状态耦合的信息。
We report results of a magneto-transport study on thin films of the topological semi-metal candidate PdSb$_{2}$ (PS). We observe a positive correction to magneto-conductivity at low temperatures, which is a signature of weak anti-localization (WAL). We analyze the WAL data within the Hikami-Larkin-Nagaoka (HLN) theory and extract the dephasing length (L$_ϕ$) whose temperature dependence reveals the various phase relaxation mechanisms. From the WAL effect, we also extract $α$ (the number of transport channels). The evolution of $α$ with temperature and film thickness reflects how the coupling between different conducting channels (Topological surface channels and bulk channels) changes. Additionally, the electron-electron interaction (EEI) effect was observed in the temperature-dependent conductivity at low temperatures. From the EEI effect, we get an alternate estimate of the number of transport channels and obtain a value similar to that obtained from the analysis of the WAL effect. This suggests that in disordered films, the EEI effect can be used to get information about the coupling of the topological surface states with each other and with bulk states.
