论文标题
磁性域墙动力学在biLayer cri $ _3 $的外部电场下
Magnetic domain wall dynamics under external electric field in bilayer CrI$_3$
论文作者
论文摘要
通过操纵双层CRI $ _3 $的磁性序列，我们进行了微观计算，以在存在电场的情况下找到系统的磁顺序和各种磁性域。利用密度函数模拟，引入了自旋模型哈密顿量，该模型由各向同性交换耦合，dzyaloshinskii-moriya（DM）相互作用和现场磁各向异性组成。通过求解Landau-Lifshitz-Gilbert方程，获得了两个众所周知的双层CRI $ _3 $，低温（LT）和高温（HT）阶段的自旋动力学。我们表明，磁纹理依赖于双层CRI $ _3 $堆叠，并且稳定的磁性域可能会出现在HT堆栈中，而HT堆栈可通过外部电气和磁场进行调谐。因此，我们建议HT阶段代表了现代在磁性域工程上的自旋设备中数据存储的有前途的候选者。
Motivated by manipulating the magnetic order of bilayer CrI$_3$, we carry out microscopic calculations to find the magnetic order and various magnetic domains of the system in the presence of an electric field. Making use of density functional simulations, a spin model Hamiltonian is introduced consisting of isotropic exchange couplings, Dzyaloshinskii-Moriya (DM) interaction, and on-site magnetic anisotropy. The spin dynamics of two well-known states of bilayer CrI$_3$, low temperature (LT) and high temperature (HT) phases, are obtained by solving the Landau-Lifshitz-Gilbert equation. We show that the magnetic texture is stacking-dependent in bilayer CrI$_3$ and stable magnetic domains can appear in the HT stack which are tunable by external electric and magnetic fields. Therefore, we suggest that the HT phase represents a promising candidate for data storage in the modern generation of spintronic devices working on magnetic domain engineering.
