论文标题
van der waals中的磁性中子衍射研究分层mnbi $ _ {2n} $ te $ _ {3n+1} $
Neutron diffraction study of magnetism in van der Waals layered MnBi$_{2n}$Te$_{3n+1}$
论文作者
论文摘要
最近发现二维范德华Mnbi $ _ {2n} $ te $ _ {3n+1} $(n = 1,2,3,4)化合物是固有的磁性绝缘体,使量子异常霍尔霍尔效应和多样化的拓扑状态。在这里,我们总结并比较了该家族的晶体和磁性结构,并讨论化学成分对磁性的影响。我们发现,Mnbi $ _ {2n} $ te $ _ {3n+1} $(n = 1、2、3、4)的MnBi $ _ {2n} $ _ {2n} $ _ {2n} $ _ {2、2、3、4)的BI占用很大一部分,而Mn在中子差异实验的分辨率内无法检测到MN。 Mn的占用率单调随着n的增加而降低。代表性MNBI $ _ {4} $ TE $ _ {7} $上的偏振中子衍射表明,其磁化密度仅在MN站点累积,与Uncolarized Neutrized Neutric衍射的结果非常吻合。 MN位点BI的缺陷自然解释了持续减少的饱和磁矩从n = 1到n = 4。所有化合物的实验估计的临界指数通常表明磁性的三维特征。我们的工作提供了材料指定的结构参数,这些参数可能对频带结构计算有用,以了解观察到的拓扑表面状态并通过化学掺杂设计量子磁性材料。
Two-dimensional van der Waals MnBi$_{2n}$Te$_{3n+1}$ (n = 1, 2, 3, 4) compounds have been recently found to be intrinsic magnetic topological insulators rendering quantum anomalous Hall effect and diverse topological states. Here, we summarize and compare the crystal and magnetic structures of this family, and discuss the effects of chemical composition on their magnetism. We found that a considerable fraction of Bi occupies at the Mn sites in MnBi$_{2n}$Te$_{3n+1}$ (n = 1, 2, 3, 4) while Mn is no detectable at the non-magnetic atomic sites within the resolution of neutron diffraction experiments. The occupancy of Mn monotonically decreases with the increase of n. The polarized neutron diffraction on the representative MnBi$_{4}$Te$_{7}$ reveals that its magnetization density is exclusively accumulated at the Mn site, in good agreement with the results from the unpolarized neutron diffraction. The defects of Bi at the Mn site naturally explain the continuously reduced saturated magnetic moments from n = 1 to n = 4. The experimentally estimated critical exponents of all the compounds generally suggest a three-dimensional character of magnetism. Our work provides material-specified structural parameters that may be useful for band structure calculations to understand the observed topological surface states and for designing quantum magnetic materials through chemical doping.