论文标题
压力控制的零场自旋分裂中的碳化硅
Stress-controlled zero-field spin splitting in silicon carbide
论文作者
论文摘要
我们报告了静态机械变形对在室温下碳化硅硅位置空缺的零场分裂的影响。我们使用ALN/6H-SIC异质结构因生长条件而变形，并通过空间分辨共聚焦RAMAN光谱法监测应力分布与距离异界面的距离的函数。通过光学检测的磁共振测量的V1/V3和V2中心的零场分裂显示，与散装值相比，在异质方面揭示了显着的变化。这种方法允许明确确定自旋形式的相互作用常数，V1/V3中心的旋转式相互作用常数为$ 0.75 \，\ mathrm {ghz} $，对于V2中心而言，V1/V3中心为$ 0.5 \，\ Mathrm {ghz} $。提供ALN的压电性，我们的结果提供了一种策略，可以通过变形实现SIC中自旋过渡能的按需微调。
We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress distribution as a function of distance from the heterointerface with spatially-resolved confocal Raman spectroscopy. The zero-field splitting of the V1/V3 and V2 centers in 6H-SiC, measured by optically-detected magnetic resonance, reveal significant changes at the heterointerface compared to the bulk value. This approach allows unambiguous determination of the spin-deformation interaction constant, which turns out to be $0.75 \, \mathrm{GHz}$ for the V1/V3 centers and $0.5 \, \mathrm{GHz}$ for the V2 centers. Provided piezoelectricity of AlN, our results offer a strategy to realize the on-demand fine tuning of spin transition energies in SiC by deformation.
