论文标题
在混合正交连接器中使用芯片二氧化钒氧化物的片上等离子调节剂的设计
Design of on-chip plasmonic modulator with vanadium-dioxide in hybrid orthogonal junctions on Silicon-on-Insulator
论文作者
论文摘要
我们使用二氧化钒作为绝缘体上硅上的调节材料，基于混合正交银连接剂的等离激元调节剂。调节器的超紧密占地面积为1.8μmx1μm，基于正交几何形状，具有100nm x 100nm调节截面。我们利用二氧化钒过渡期间的二氧化钒折射率的巨大变化，以达到46.89db/μm的高调制深度。我们还为开发该设备提供了制造策略。设备的几何形状在下一代高频光子调制器的开发中具有潜在的应用，以进行光学通信，该光子通信需要纳米尺度足迹，大调制深度和小插入损失。
We present a plasmonic modulator based on hybrid orthogonal silver junctions using vanadium dioxide as the modulating material on the silicon on insulator. The modulator has an ultra-compact footprint of 1.8μm x 1μm with a 100nm x 100nm modulating section based on the orthogonal geometry. We take advantage of large change in the refractive index of vanadium dioxide during its phase transition to achieve a high modulation depth of 46.89dB/μm. We also provide a fabrication strategy for the development of this device. The device geometry has potential applications in the development of next generation high frequency photonic modulators for optical communications which require a nanometer scale footprint, large modulation depth and small insertion losses.
