论文标题
所有2D异质结构隧道场效应晶体管：频段对齐和异界面质量的影响
All 2D Heterostructure Tunnel Field Effect Transistors: Impact of Band Alignment and Heterointerface Quality
论文作者
论文摘要
Van der waals异质结构是隧道场效应晶体管（TFET）的理想材料平台，因为由于理想的，悬挂的悬挂式悬挂键的无杂质杂质，因此在室温（RT）下，在室温（RT）的带频段隧道（BTBT）的主要电流是可行的。但是，实现玻尔兹曼限制的低于60 mvdec-1的亚阈值摇摆（SS）值仍然具有挑战性。在这项工作中，我们系统地研究了N-MOS2通道异质结构TFET中的频段对齐和异互面质量。通过选择具有足够高的掺杂水平的P+-MOS2源，无论MOS2通道层的数量如何，都可以实现稳定的GATE调制到III型带对齐。对于栅极堆栈的组，发现Al2O3作为顶门的沉积引入了反向偏置下的发电电流的缺陷状态，而H-BN顶栅的积分也提供了无缺陷，无干净的界面，从而导致BTBT主导电流，即使在RT处也是如此。通过将III型N-MOS2/P+-MOS2异质结构与H-BN顶部栅极绝缘子相结合而产生的所有2D异质结构TFET，从而导致RT处的SS值低。
Van der Waals heterostructures are the ideal material platform for tunnel field effect transistors (TFETs) because a band-to-band tunneling (BTBT) dominant current is feasible at room temperature (RT) due to ideal, dangling bond free heterointerfaces. However, achieving subthreshold swing (SS) values lower than 60 mVdec-1 of the Boltzmann limit is still challenging. In this work, we systematically studied the band alignment and heterointerface quality in n-MoS2 channel heterostructure TFETs. By selecting a p+-MoS2 source with a sufficiently high doping level, stable gate modulation to a type III band alignment was achieved regardless of the number of MoS2 channel layers. For the gate stack formation, it was found that the deposition of Al2O3 as the top gate introduces defect states for the generation current under reverse bias, while the integration of an h-BN top gate provides a defect-free, clean interface, resulting in the BTBT dominant current even at RT. All 2D heterostructure TFETs produced by combining the type III n-MoS2/p+-MoS2 heterostructure with the h-BN top gate insulator resulted in low SS values at RT.
