论文标题
硅Nanosandwiches中的高温量子动力学效应
High Temperature Quantum Kinetic Effect in Silicon Nanosandwiches
论文作者
论文摘要
显示了限制半导体量子井边缘通道的负-U杂质条，显示出在自旋依赖性转运过程中内部的有效冷却，并减少电子电子相互作用。上述还促进了复合玻色子和费米子的创建，这是通过在载体低板密度的条件下捕获边缘通道上的单个磁通量量子，从而为较高温度下至室温的弱磁场中的量子动力学现象的注册打开了新的机会。 As a certain version noted above we present the first findings of the high temperature de Haas-van Alphen, 300K, quantum Hall, 77K, effects as well as quantum conductance staircase in the silicon sandwich structure that represents the ultra-narrow, 2 nm, p-type quantum well (Si-QW) confined by the delta barriers heavily doped with boron on the n-type Si (100) 表面。
The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron interaction. The aforesaid promotes also the creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels under the conditions of low sheet density of carriers, thus opening new opportunities for the registration of the quantum kinetic phenomena in weak magnetic fields at high temperatures up to the room temperature. As a certain version noted above we present the first findings of the high temperature de Haas-van Alphen, 300K, quantum Hall, 77K, effects as well as quantum conductance staircase in the silicon sandwich structure that represents the ultra-narrow, 2 nm, p-type quantum well (Si-QW) confined by the delta barriers heavily doped with boron on the n-type Si (100) surface.
