论文标题
二维电子气体，基于5S氧化物具有高房间温度迁移率和应变灵敏度
A two-dimensional electron gas based on a 5s oxide with high room-temperature mobility and strain sensitivity
论文作者
论文摘要
在低维电子系统中，光学和电子自由度以及量子限制的耦合对于在强相关的氧化物电子中实现外来功能尤其有趣。最近，对于外在的LA或SB掺杂，已经实现了大型带隙透明氧化物-Basno $ _3 $的高温迁移率，这引起了极大的研究关注。在这项工作中，我们报告了在巴斯诺$ _3 $薄膜中观察室温铁磁性的观察，以及通过透明的Basno $ _3 $通过氧气空缺创造的二维电子气（2DEG）的实现，该空置可产生，这表现出高载流子的高载体密度为$ \ sim 7.72*^10^10^10^10^10^10^^^rm。高房间温度的移动性约为18厘米$^2 $/v/s。这样的2DEG对应变非常敏感，在室温下，巨大的阻力增强（超过540 kohm/平方）。因此，这项工作为探索适用于室温的低维氧化物电子和设备的物理学创造了新的途径。
The coupling of optical and electronic degrees of freedom together with quantum confinement in low-dimensional electron systems is particularly interesting for achieving exotic functionalities in strongly correlated oxide electronics. Recently, high room-temperature mobility has been achieved for a large bandgap transparent oxide - BaSnO$_3$ upon extrinsic La or Sb doping, which has excited significant research attention. In this work, we report the observation of room-temperature ferromagnetism in BaSnO$_3$ thin films and the realization of a two-dimensional electron gas (2DEG) on the surface of transparent BaSnO$_3$ via oxygen vacancy creation, which exhibits a high carrier density of $\sim 7.72*10^{14} /{\rm cm}^2$ and a high room-temperature mobility of ~18 cm$^2$/V/s. Such a 2DEG is rather sensitive to strain and a less than 0.1% in-plane biaxial compressive strain leads to a giant resistance enhancement of 350% (more than 540 kOhm/Square) at room temperature. Thus, this work creates a new path to exploring the physics of low-dimensional oxide electronics and devices applicable at room temperature.
