论文标题
CMOS图像传感器中每个像素的单个微孔孔具有增强的近红外光学灵敏度
Single Microhole per Pixel in CMOS Image Sensor with Enhanced Optical Sensitivity in Near-Infrared
论文作者
论文摘要
研究了基于硅光电二的CMOS传感器，具有300至1000 nm波长范围的背面刷新。我们表明，光电二极管中的一个孔会提高像素的光学效率。在近红外波长中，增强允许在3微米厚的Si中吸收70％。它比平面像素好4倍。我们比较了单孔和孔阵列的不同形状和尺寸。我们已经表明，单个孔中的一定尺寸和形状发音更好地提高了光学效率。与像素之间的沟渠成功减少了串扰。我们优化了沟渠以实现1.12微米像素的最小像素分离。
Silicon photodiode based CMOS sensors with backside-illumination for 300 to 1000 nm wavelength range were studied. We showed that a single hole in the photodiode increases the optical efficiency of the pixel. In near-infrared wavelengths, the enhancement allows 70% absorption in a 3 microns thick Si. It is 4x better than for the flat pixel. We compared different shapes and sizes of single holes and holes arrays. We have shown that a certain size and shape in single holes pronounce better optical efficiency enhancement. The crosstalk was successfully reduced with trenches between pixels. We optimized the trenches to achieve minimal pixel separation for 1.12 microns pixel.
