论文标题
yba $ _2 $ cu $ _3 $ o $ _ {7-δ} $ plosed Laser Secoding of CEO $ _2 $ buffered Sapphire的胶片的属性
Properties of YBa$_2$Cu$_3$O$_{7-δ}$ films grown by pulsed laser deposition on CeO$_2$-buffered sapphire
论文作者
论文摘要
在目前的工作中，我们研究了YBA $ _2 $ CU $ _3 $ O $ $ _ {7-δ} $（YBCO）胶片的脉冲激光沉积的增长。为了改善基板与胶片之间的晶格参数的匹配，我们使用CEO $ _ {2} $缓冲层，在YBCO沉积之前重结晶。首先使用原子力显微镜（AFM）和X射线衍射确定缓冲层重结晶的最佳厚度和温度。接下来，我们使用AFM检查YBCO膜粗糙度对膜厚度的依赖性，并通过磁光成像研究了磁通量渗透到膜中的同质性。我们发现，这些薄膜的临界温度和临界电流密度与匹配良好的底物上生长的YBCO膜非常相似。看来，YBCO膜的微观结构受缓冲层中结构缺陷的影响以及氧缺乏的变化，这导致了适合应用的临界电流密度的高值。
In the present work we study the growth by pulsed laser deposition of YBa$_2$Cu$_3$O$_{7-δ}$ (YBCO) films on the r-cut sapphire substrates. To improve the matching of the lattice parameters between the substrate and the film we use CeO$_{2}$ buffer layer, recrystallized prior to the deposition of YBCO. The optimal thickness and temperature of recrystallization of the buffer layer is first determined using atomic force microscopy (AFM) and X-ray diffraction. Next, we use the AFM to examine the dependence of YBCO film roughness on the film thickness, and we study the homogeneity of magnetic flux penetration into the films by magneto-optical imaging. We find that the superconducting critical temperature and critical current density of these films are very similar to those of YBCO films grown on well-matched substrates. It appears that the microstructure of YBCO films is affected by structural defects in the buffer layer as well as variations in oxygen deficiency, which results in high values of critical current density suitable for application.
