论文标题
从头开始筛选高级互连应用的金属最大陶瓷
Ab initio screening of metallic MAX ceramics for advanced interconnect applications
论文作者
论文摘要
已经使用基于密度功能理论的自动化第一原理模拟评估了高级CMOS技术节点中互连金属线中的各种分层三元碳化物和氮化物最大相的潜力。这些化合物的电阻率缩放潜力，即它们对降低线尺寸的电阻率的敏感性通过评估其在半经典运输形式主义中的运输特性来对CU和RU进行了基准测试。此外，它们的凝聚力已被评估为抵抗电迁移和对扩散屏障的需求的代理。结果表明，许多最大阶段在高级CMOS技术节点的互连中显示出有望作为导体。
The potential of a wide range of layered ternary carbide and nitride MAX phases as conductors in interconnect metal lines in advanced CMOS technology nodes has been evaluated using automated first principles simulations based on density functional theory. The resistivity scaling potential of these compounds, i.e. the sensitivity of their resistivity to reduced line dimensions, has been benchmarked against Cu and Ru by evaluating their transport properties within a semiclassical transport formalism. In addition, their cohesive energy has been assessed as a proxy for the resistance against electromigration and the need for diffusion barriers. The results indicate that numerous MAX phases show promise as conductors in interconnects of advanced CMOS technology nodes.
