论文标题

在低温下评估Klaus ASIC

Evaluation of the KLauS ASIC at low temperature

论文作者

Wang, Wei, Shen, Wei, Yuan, Zhenxiong, Briggl, Konrad, Schultz-Coulon, Hans-Christian, Yan, Wenqi, Cao, Guofu, Li, Zepeng, Qi, Ming, Wen, Liangjian

论文摘要

提议首先使用配备了大面积硅光生型(sipms)($ \ sim $ 10〜m $ $^2 $)的Taishan抗神经天文台(TAO)首先使用冷液体闪烁剂探测器(-50〜 $^\ cirver $ c),以准确地衡量与反应器静脉电机谱一起使用<2 $ <2 $ <2 $ <2 $ <2 $ <2 $ <2 $ <2 $。 Klaus ASIC在室温下表现出色,是Tao的潜在读数解决方案。在这项工作中,我们报告了对Klaus ASIC(Klaus5)的第五版的评估,从室温到-50〜 $^\ Circ $ c,并带有注射电荷或sipms的输入。我们的结果表明,KLAUS5在测试温度下具有良好的性能,并且电荷噪声,电荷线性,增益均匀性或恢复时间没有显着降解。同时,我们还观察到,当芯片在寒冷条件下(包括动态范围和功耗)时,几个关键参数会降低。但是,即使有这种降解,仍可以为经过测试的SIPM获得良好的信噪比和良好的单个光电子,增益大于1.5 $ \ times $ 10 $^6 $,甚至在一个通道中最多可与1〜 cm $^2 $的SIPM区域相对应,对应于一个输入能力,与输入能力相对应大约5〜nf。因此,我们得出的结论是,Klaus5可以满足TAO的精确电荷测量要求。

The Taishan Antineutrino Observatory (TAO) is proposed to first use a cold liquid scintillator detector (-50~$^\circ$C) equipped with large-area silicon photomultipliers (SiPMs) ($\sim$10~m$^2$) to precisely measure the reactor antineutrino spectrum with a record energy resolution of < 2\% at 1 MeV. The KLauS ASIC shows excellent performance at room temperature and is a potential readout solution for TAO. In this work, we report evaluations of the fifth version of the KLauS ASIC (KLauS5) from room temperature to -50~$^\circ$C with inputs of injected charge or SiPMs. Our results show that KLauS5 has good performance at the tested temperatures with no significant degradation of the charge noise, charge linearity, gain uniformity or recovery time. Meanwhile, we also observe that several key parameters degrade when the chip operates in cold conditions, including the dynamic range and power consumption. However, even with this degradation, a good signal-to-noise ratio and good resolution of a single photoelectron can still be achieved for the tested SiPM with a gain of greater than 1.5$\times$10$^6$ and even an area of SiPM up to 1~cm$^2$ in one channel, corresponding to an input capacitance of approximately 5~nF. Thus, we conclude that KLauS5 can fulfill the TAO requirements for precise charge measurement.

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