论文标题
在低温和高磁场上Ti/Tiox/Ti结构的电导
Electrical conduction of Ti/TiOx/Ti structures at low temperatures and high magnetic fields
论文作者
论文摘要
我们介绍了Ti/tiox/Ti平面结构的电传导研究的结果，该结构是由钛薄膜的尖端诱导的局部阳极氧化（LAO）制备的。准备好的结构在300 K和30 K之间的温度下显示了几乎线性的I-V曲线，并且在较低温度下仅与线性行为略有偏差。结构的电导率可以通过两通道模型充分解释，其中可变范围的跳跃通道和金属频道并行共存，而在降低温度下，已经观察到了从Mott到Efros-Shklovskii可变式途径电导率的交叉。即使在最高9吨的磁场中，研究结构的磁性也很小。结构的报道电特性表明其有前途的应用是低温容量温度传感器对于低温区域和高磁场。
We present results of electrical conduction studies of Ti/TiOx/Ti planar structures prepared by tip-induced local anodic oxidation (LAO) of titanium thin films. The prepared structures have shown almost linear I-V curves at temperatures between 300 K and 30 K, and only slight deviation from linear behaviour at lower temperatures. Electrical conductance of the structures can be adequately explained by a two-channel model where variable range hopping channels and metallic ones coexist in parallel, while a crossover from Mott to Efros-Shklovskii variable-range-hopping conductivity has been observed at decreasing temperature. The magnetoresistance of the studied structures is very small even in magnetic fields up to 9 T. The reported electrical properties of the structures indicate their promising applications as very low heat capacity temperature sensors for cryogenic region and high magnetic fields.
