论文标题
平行电场和磁场对弯曲的二维材料中Rydberg激子的影响
Effects of parallel electric and magnetic fields on Rydberg excitons in buckled two-dimensional materials
论文作者
论文摘要
我们研究单层Rydberg状态的直接和间接磁脱糖，以及垂直于单层和异质结构的外部平行电场和磁场的Xenes（硅，德国烯和Stanene）的双层异质结构（硅，德国烯和Stanene）。我们通过使用rytova-keldysh的数值集成来计算Rydberg状态的Magnetoexcitons 1 $ s $，2 $ s $，2 $ s $，3 $ s $和4 $ s $，使用rytova-keldysh的数值集成Schrödinger方程的数值集成，用于直接Magnetoexciton和Rytova-keldysss和colectyss和coolommshysss和colombysssss nockity。后者允许了解筛查在Xenes中的作用。在外部垂直电场中，Xene单层的屈曲结构导致sublattices之间的电势差异，从而使电子和孔质量调节磁性能量和磁磁性系数（DMC）。我们报告了电场和磁场对结合能和DMC的能量贡献。展示了直接和间接磁磁场的能量贡献的可调性。还表明，直接激子的DMC可以通过电场调节，并且可以通过电场调节间接磁磁芯的DMC，并通过H-BN层的数量来操纵。因此，这些允许通过外部电场和磁场以及H-BN层的数量来控制电子设备设计的可能性。 XENES单层和异质结构中磁性excitons的结合能和DMC的计算是新颖的，可以将其与实验结果进行比较。
We study direct and indirect magnetoexcitons in Rydberg states in monolayers and double-layer heterostructures of Xenes (silicene, germanene, and stanene) in external parallel electric and magnetic fields, applied perpendicular to the monolayer and heterostructure. We calculate binding energies of magnetoexcitons for the Rydberg states 1$s$, 2$s$, 3$s$, and 4$s$, by numerical integration of the Schrödinger equation using the Rytova-Keldysh potential for direct magnetoexciton and both the Rytova-Keldysh and Coulomb potentials for indirect excitons. Latter allows understanding a role of screening in Xenes. In the external perpendicular electric field, the buckled structure of the Xene monolayers leads to appearance of potential difference between sublattices allowing to tune electron and hole masses and, therefore, the binding energies and diamagnetic coefficients (DMCs) of magnetoexcitons. We report the energy contribution from electric and magnetic fields to the binding energies and DMCs. The tunability of the energy contribution of direct and indirect magnetoexcitons by electric and magnetic fields is demonstrated. It is also shown that DMCs of direct excitons can be tuned by the electric field, and the DMCs of indirect magnetoexcitons can be tuned by the electric field and manipulated by the number of h-BN layers. Therefore, these allowing the possibility of electronic devices design that can be controlled by external electric and magnetic fields and the number of h-BN layers. The calculations of the binding energies and DMCs of magnetoexcitons in Xenes monolayers and heterostructures are novel and can be compared with the experimental results when they will be available.
