论文标题

$ su(4)$ valley +旋转波动干扰机制在魔术角扭曲双层石墨烯:顶点校正的影响

$SU(4)$ Valley + Spin Fluctuation Interference Mechanism for Nematic Order in Magic Angle Twisted Bilayer Graphene: Impact of Vertex Corrections

论文作者

Onari, Seiichiro, Kontani, Hiroshi

论文摘要

在魔术角扭曲的双层石墨烯(MATBG)中,最引人注目的观察之一是$ C_3 $ -SMEMEMEMETRY-BREAKETRY-BREAKENTING-BEAKENTING-BRIGHTING NEMATIT状态。我们确定MATBG中的nematicition是$ e $ symmetry ferro债券订单,这是由于$ e $ e $ symmetry粒子孔配对凝结而对相关跳跃积分的调节。 MATBG中的列性起源于$ su(4)$ valley+自旋复合波动之间的显着量子干扰。这种新颖的“ Valley +自旋波动干扰机制”通过MATBG现实的多型哈伯德模型的密度波方程分析揭示了。 \ color {black}我们发现,一旦每个山谷中都存在三个van hove奇异点,列表状态是可靠的。这种干扰机制还导致新型的时间逆向对称性破裂的山谷极化,并伴有电荷回路电流。我们讨论了MATBG和基于FE的超导体之间有趣的相似性和差异。

In the magic angle twisted bilayer graphene (MATBG), one of the most remarkable observations is the $C_3$-symmetry-breaking nematic state. We identify that the nematicity in MATBG is the $E$-symmetry ferro bond order, which is the modulation of correlated hopping integrals owing to the $E$-symmetry particle-hole pairing condensation. The nematicity in MATBG originates from prominent quantum interference among $SU(4)$ valley+spin composite fluctuations. This novel "valley + spin fluctuation interference mechanism" is revealed by the density wave equation analysis for realistic multiorbital Hubbard model for MATBG. \color{black}We find that the nematic state is robust once three van Hove singularity points exist in each valley. This interference mechanism also causes novel time-reversal-symmetry-broken valley polarization accompanied by a charge loop current. We discuss interesting similarities and differences between MATBG and Fe-based superconductors.

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