论文标题
铜氧化物薄膜中的电阻式转换
Light induced resistive switching in copper oxide thin films
论文作者
论文摘要
铜氧化物薄膜基金属 - 绝缘子 - 金属结构受到白光照射。顶部电极包括Al，CR和Ni，而底部电极为AU或PT。白光脉冲控制设定过程，并且可以在非常低的电压（数十毫升伏特）下执行此光诱导的集合（LIS），这在正常设置过程中是不可能的。 LIS在脉冲的正边缘启动，光的下降边缘没有影响。在大多数情况下，高电阻态（HRS）至低电阻态（LRS）过渡是不可逆的，即即使在光脉冲关闭后，设备仍在LRS中仍然保留在LRS中。光诱导的重置（LIR）仅在一个设备结构Al/cuxo/au中实现。通过使用LIS和LIR，可以在很大程度上降低设备的设置和重置功率，集合和重置参数变化也会减少。因此，当前的工作指出了形成和无符合性的电阻随机访问记忆设备的可能性。
Copper oxide thin film based metal-insulator-metal structures were subjected to white light irradiation.The top electrodes included Al, Cr and Ni while the bottom electrode was either Au or Pt. A white light pulse controls the set process and this light induced set (LIS) can be performed at very low voltages (tens of milli volts) which is not possible in the normal set process. The LIS is initiated at the positive edge of the pulse and there is no effect of the falling edge of the light. In most cases the high resistance state (HRS) to low resistance state (LRS) transition is irreversible i.e.the devices continue to remain in the LRS even after the light pulse is switched off. Light induced reset (LIR) is achieved in only one device structure Al/CuxO/Au. By using LIS and LIR, set and reset power of the device can be reduced to a great extent and the set and reset parameters variation also reduces. The current work, thus, points to the possibility of formation and compliance-free resistive random access memory devices.
