论文标题
通过果胶源势势受控电子传输电势
Controlled electron transmission by lead chalcogenide barrier potential
论文作者
论文摘要
考虑了电子在IV-VI半导体化合物的矩形屏障中的传播。传导电子到达屏障，并根据屏障电位$ v_b $和电子能量$ e $的相对值反映或传输。该理论与Dirac四组分旋转器相比，是屏障两侧的边界条件。计算出的传输系数$ T_C $是屏障电压的振荡功能，在零（用于全电子反射）和统一（用于全电子传输）之间。研究了屏障外部和内部电子波功能的特征。存在总部总保护，即。 e。传输和反射电流的总和等于传入电流。对于各种屏障宽度和传入的电子能量，研究了变速箱$ T_C $。最后，将传输系数$ t_c $作为$ v_b $的函数进行研究，以减少不同pb $ _ {1-x} $ sn $ _x $ _x $ se化合物的能量差距$ e_g $ e_g $，范围为150 mev $ \ ge ge g ge q e_g e_g e_g \ geq $ geq $ 2 mev。据表明，对于非常小的差距，值$ t_c $的行为与单层石墨烯中屏障的手性电子隧道相似。对于$ e_g $ = 0（pb $ _ {0.81} $ sn $ _ {0.19} $ se）系数$ t_c $达到1的值，独立于$ v_b $。
Transmission of electrons across a rectangular barrier of IV-VI semiconductor compounds is considered. Conduction electrons arrive at the barrier and are reflected or transmitted through it depending on the relative values of the barrier potential $V_b$ and the electron energy $E$. The theory, in close analogy to the Dirac four component spinors, accounts for the boundary conditions on both sides of the barrier. The calculated transmission coefficient $T_C$ is an oscillatory function of the barrier voltage varying between zero (for full electron reflection) and unity (for full electron transmission). Character of electron wave functions outside and inside the barrier is studied. There exists a total current conservation, i. e. the sum of transmitted and reflected currents is equal to the incoming current. The transmission $T_C$ is studied for various barrier widths and incoming electron energies. Finally, the transmission coefficient $T_C$ is studied as a function of $V_b$ for decreasing energy gaps $E_g$ of different Pb$_{1-x}$Sn$_x$Se compounds in the range of 150 meV $\geq E_g \geq$ 2 meV. It is indicated that for very small gap values the behaviour of $T_C$ closely resembles that of the chiral electron tunneling by a barrier in monolayer graphene. For $E_g$ =0 (Pb$_{0.81}$Sn$_{0.19}$Se) the coefficient $T_C$ reaches the value of 1 independently of $V_b$.
