论文标题
狄拉克材料的高压合成：分层van der waals键合ben $ _4 $ polymorph
High-pressure synthesis of Dirac materials: layered van der Waals bonded BeN$_4$ polymorph
论文作者
论文摘要
众所周知，高压化学会激发具有特性异常的意外新类化合物的产生。在这里，我们报告了〜90 GPA的合成，该GPA是新型芽孢杆菌多硝酸盐，单斜型和三斜骨BEN4的合成。将三斜阶段解压缩到环境条件下，将通过弱范德华键相互连接的化合物转变为由弱范德华键相互联系的，这些键由聚乙二醇样氮链与共轭π-Sypems组成，并在方形丙层均衡中进行原子。单个BEN4层的理论计算表明，其电子晶格是通过稍微扭曲的蜂窝结构来描述了石墨烯晶格的，并且在费米水平的电子带结构中存在狄拉克点。 BEN4层，即铍烯代表了一种质量上新的2D材料类，可以由金属原子和聚合物氮链和宿主各向异性Dirac Fermions构建。
High pressure chemistry is known to inspire the creation of unexpected new classes of compounds with exceptional properties. Here we report the synthesis at ~90 GPa of novel beryllium polynitrides, monoclinic and triclinic BeN4. The triclinic phase, upon decompression to ambient conditions, transforms into a compound with atomic-thick BeN4 layers interconnected via weak van der Waals bonds consisting of polyacetylene-like nitrogen chains with conjugated π-systems and Be atoms in square-planar coordination. Theoretical calculations for a single BeN4 layer show that its electronic lattice is described by a slightly distorted honeycomb structure reminiscent of the graphene lattice and the presence of Dirac points in the electronic band structure at the Fermi level. The BeN4 layer, i.e. beryllonitrene, represents a qualitatively new class of 2D materials that can be built of a metal atom and polymeric nitrogen chains and host anisotropic Dirac fermions.
