论文标题
Zrte $ _5 $中本地原子缺陷的性质及其对低能电子结构的影响
Nature of native atomic defects in ZrTe$_5$ and their impact on the low-energy electronic structure
论文作者
论文摘要
在过去的几十年中，对Zrte $ _5 $的异常低能电子特性的调查已经得出了广泛的结论。一个开放的问题是增长方法对Zrte $ _5 $样品的化学计量的影响，尤其是考虑到其在化学势附近的状态密度很小的情况下。在这里，我们报告了高分辨率扫描隧道显微镜和通过不同方法生长的样品进行的光谱测量值。使用密度函数理论计算，我们确定了Zrte $ _5 $的表面上最普遍的原子缺陷类型，即te空位和插入的ZR原子。最后，我们精确地量化了它们的密度，并概述了它们作为该材料异常电阻率的电离缺陷的作用。
Over the past decades, investigations of the anomalous low-energy electronic properties of ZrTe$_5$ have reached a wide array of conclusions. An open question is the growth method's impact on the stoichiometry of ZrTe$_5$ samples, especially given the very small density of states near its chemical potential. Here we report on high resolution scanning tunneling microscopy and spectroscopy measurements performed on samples grown via different methods. Using density functional theory calculations, we identify the most prevalent types of atomic defects on the surface of ZrTe$_5$, namely Te vacancies and intercalated Zr atoms. Finally, we precisely quantify their density and outline their role as ionized defects in the anomalous resistivity of this material.
