论文标题
超导体传播器界面中双重接近效应的杂交机制
Hybridization mechanism of the dual proximity effect in superconductor-topological insulator interfaces
论文作者
论文摘要
在这种交流中，我们考虑了传统的$ s $ - 波超导体（S）纳米岛与拓扑绝缘子（TI）之间的接触中的近端效应的一般性。考虑了局部杂交耦合机制，并佐证了相应的模型，该模型不仅捕获了Ti中诱导的非常规的超导性，而且还可以预测拓扑受保护的表面状态扩散到超导层中的超导层中。接近效应的这种双重性质特别导致了对这些系统中拓扑超导性的修改描述。在扫描隧道显微镜测量的背景下，讨论了这种现象的实验可访问的特征。为此，在超导体和拓扑绝缘体中计算了有效的状态密度。作为一个指导的例子，为存放在bi $ _2 $ se $ _3 $的表面上的NB群岛提供了实际应用。获得的结果是一般的，可以超出使用的特定材料系统。讨论了这些结果对量子计算处理的接近电路和混合硬件设备的可能影响。
In this communication we consider generalities of the proximity effect in a contact between a conventional $s$-wave superconductor (S) nano-island and a thin film of a topological insulator (TI). A local hybridization coupling mechanism is considered and a corresponding model is corroborated that captures not only the induced unconventional superconductivity in a TI, but also predicts the spreading of topologically protected surface states into the superconducting over-layer. This dual nature of the proximity effect leads specifically to a modified description of topological superconductivity in these systems. Experimentally accessible signatures of this phenomenon are discussed in the context of scanning tunneling microscopy measurements. For this purpose an effective density of states is computed in both the superconductor and topological insulator. As a guiding example, practical applications are made for Nb islands deposited on a surface of Bi$_2$Se$_3$. The obtained results are general and can be applied beyond the particular material system used. Possible implications of these results to proximity circuits and hybrid hardware devices for quantum computation processing are discussed.
