论文标题
在室温下观察VO2的光电非易失性记忆和振荡
Observation of photoelectric nonvolatile memory and oscillations in VO2 at room temperature
论文作者
论文摘要
二氧化钒（VO2）是一种相变材料，可以通过电子和结构相变的高电阻率和低电阻率态在高度变化。到目前为止，VO2存储器设备在室温下基本上是挥发性的，非易失性记忆需要非镜环境（例如，温度升高，电解质）和较长的写入时间。在这里，我们报告了在室温下通过电压振荡读数在室温下对VO2中光学上可寻址的非易失性存储器的首次观察。读写时间必须比大约150μs短。电压振荡的记忆和发作的写入具有最小的光功率阈值。这一发现证明了VO2对于新计算设备和架构（例如人造神经元和振荡性神经网络）的潜力。
Vanadium dioxide (VO2) is a phase change material that can reversibly change between high and low resistivity states through electronic and structural phase transitions. Thus far, VO2 memory devices have essentially been volatile at room temperature, and nonvolatile memory has required non-ambient surroundings (e.g., elevated temperatures, electrolytes) and long write times. Here, we report the first observation of optically addressable nonvolatile memory in VO2 at room temperature with a readout by voltage oscillations. The read and write times had to be kept shorter than about 150 μs. The writing of the memory and onset of the voltage oscillations had a minimum optical power threshold. This discovery demonstrates the potential of VO2 for new computing devices and architectures, such as artificial neurons and oscillatory neural networks.
