论文标题

通过量身定制的金属衬里改善ofrar的HRS变异性

Improvement of HRS Variability in OxRRAM by Tailored Metallic Liner

论文作者

Guillaume, N., Azzaz, M., Blonkowski, S., Jalaguier, E., Gonon, P., Vallée, C., Blomberg, T., Tuominen, M., Sprey, H., Bernasconi, S., Charpin-Nicolle, C., Nowak, E.

论文摘要

在这项工作中,我们提出了一种新颖的整合,以显着降低高电阻状态的变化,并改善基于氧化物的电阻随机访问记忆(Oxrram)设备的热稳定性。提出了一种具有金属衬里的新型设备,具有平行电阻。为了评估该溶液的效果,我们将结果与标准ofram细胞结构进行比较。在耐力和温度下,电阻状态的一个非常好的稳定性得益于基于导电的FILA-MOND模型。

In this work, we propose a novel integration in order to significantly reduce the High Resistance State vari-ability and to improve thermal stability in Oxide-based Resistive Random Access Memory (OxRRAM) devices. A novel device featuring a metallic liner, acting as a parallel resistance, is presented. To assess the effect of this solution, we compare the results with a standard OxRRAM cell structure. A very good stability of the resistive states, both in endurance and temperature, is highlighted and explained thanks to a conductive fila-ment based model.

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