论文标题
单层MOSI2N4和MOSI2AS4中的Valley Pseudospin
Valley pseudospin in monolayer MoSi2N4 and MoSi2As4
论文作者
论文摘要
长期以来，提出了二维（2D）六角形MOS2作为Valleytronic系统的有前途的材料。但是，MOS2中生长量有限，载流子运动的量限制了其进一步的应用。最近，一种新型的六边形2D MXENE，MOSI2N4，成功合成了大尺寸，出色的环境稳定性和相当大的孔迁移率。在本文中，基于第一原理计算，我们预测可以在单层MOSI2N4及其导数MOSI2AS4中实现山谷对比性能。除了传统的两层山谷之外，单层Mosi2AS4中的山谷是多折的，这意味着新的山谷尺寸。这样的多折叠山谷可以用三波段的低功率哈密顿人来描述。这项研究介绍了单层MOSI2N4和MOSI2AS4在Valleytronic设备，尤其是多个信息处理中的理论进步和潜在应用。
For a long time, two-dimensional (2D) hexagonal MoS2 was proposed as a promising material for valleytronic system. However, the limited size of growth and low carrier motilities in MoS2 restrict its further application. Very recently, a new kind of hexagonal 2D MXene, MoSi2N4, was successfully synthesized with large size, excellent ambient stability, and considerable hole mobility. In this paper, based on the first-principles calculations, we predict that the valley-contrast properties can be realized in monolayer MoSi2N4 and its derivative MoSi2As4. Beyond the traditional two-level valleys, the valleys in monolayer MoSi2As4 are multiple-folded, implying a new valley dimension. Such multiple-folded valleys can be described by a three-band low-power Hamiltonian. This study presents the theoretical advance and the potential applications of monolayer MoSi2N4 and MoSi2As4 in valleytronic devices, especially multiple information processing.
