论文标题
石墨烯场效应晶体管：评论
Graphene Field Effect Transistors: A Review
论文作者
论文摘要
过去的十年中，石墨烯研究领域及其在新型电子产品中的应用迅速增长。随着摩尔定律开始平稳，工业后的塞利康技术的需求变得越来越明显。此外，现有技术不足以实施Terahertz的检测器和接收器，这是许多应用程序所需的，包括医学成像和安全扫描。石墨烯被认为是在现有CMOS技术中替换硅的关键候选者，并且由于其出色的电子特性而实现了Terahertz检测的现场效应晶体管，并且观察到的电子机动性可达$ 2 \ times 10^5 $ cm $ cm $^2 $^2 $^2 $ v $^{ - 1} $ s $ s $ s $ s $ s $ s $^{-1} $。本报告回顾了石墨烯晶体管实现的背景下石墨烯的物理和电子特性。审查并比较了用于合成石墨烯的通用技术，例如机械去角质，化学蒸气沉积和外延生长。与实现石墨烯晶体管相关的挑战之一是，石墨烯是半金属的，带有零带隙，这在数字电子应用的背景下很麻烦。因此，该报告还回顾了使用双层石墨烯和石墨烯纳米容器在石墨烯中打开带隙的不同方法。解释了常规场效应晶体管的基本操作，并提取了文献中使用的关键功绩。最后，提出了对最新石墨烯场效应晶体管的一些示例的综述，特别关注单层石墨烯，双层石墨烯和石墨烯纳米骨。
The past decade has seen rapid growth in the research area of graphene and its application to novel electronics. With Moore's law beginning to plateau, the need for post-silicon technology in industry is becoming more apparent. Moreover, existing technology is insufficient for implementing terahertz detectors and receivers, which are required for a number of applications including medical imaging and security scanning. Graphene is considered to be a key potential candidate for replacing silicon in existing CMOS technology as well as realizing field effect transistors for terahertz detection, due to its remarkable electronic properties, with observed electronic mobilities reaching up to $2 \times 10^5$ cm$^2$ V$^{-1}$ s$^{-1}$ in suspended graphene samples. This report reviews the physics and electronic properties of graphene in the context of graphene transistor implementations. Common techniques used to synthesize graphene, such as mechanical exfoliation, chemical vapor deposition, and epitaxial growth are reviewed and compared. One of the challenges associated with realizing graphene transistors is that graphene is semimetallic, with a zero bandgap, which is troublesome in the context of digital electronics applications. Thus, the report also reviews different ways of opening a bandgap in graphene by using bilayer graphene and graphene nanoribbons. The basic operation of a conventional field effect transistor is explained and key figures of merit used in the literature are extracted. Finally, a review of some examples of state-of-the-art graphene field effect transistors is presented, with particular focus on monolayer graphene, bilayer graphene, and graphene nanoribbons.
